| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 8149623 | Journal of Crystal Growth | 2015 | 4 Pages |
Abstract
Partly released InGaAs layers forming a wrinkled network are used as templates for InAs growth. A systematic growth study was carried out, where InAs amounts from 0Â ML to 3Â ML were deposited on the patterned samples. The material migration during growth is evaluated by distinct microscopy techniques. We find a systematic accumulation of the deposited material on the released, wrinkled areas of the sample, whereas no material accumulation or formation of three-dimensional nanostructures is observed on the unreleased areas of the sample.
Keywords
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
S. Filipe Covre da Silva, E.M. Lanzoni, A. Malachias, Ch. Deneke,