| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 8149638 | Journal of Crystal Growth | 2015 | 4 Pages |
Abstract
The effects of unintentional boron contamination on optical properties of GaInP/AlGaInP quantum well structures grown by molecular beam epitaxy (MBE) are reported. Photoluminescence and secondary-ion mass spectrometry (SIMS) measurements revealed that the optical activity of boron-contaminated quantum wells is heavily affected by the amount of boron in GaInP/AlGaInP heterostructures. The boron concentration was found to increase when cracking temperature of the phosphorus source was increased. Boron incorporation was enhanced also when aluminum was present in the material.
Keywords
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
Antti Tukiainen, Jari Likonen, Lauri Toikkanen, Tomi Leinonen,