| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 8149695 | Journal of Crystal Growth | 2015 | 5 Pages |
Abstract
The growth of Al0.85Ga0.15P on GaP using gas-source molecular-beam epitaxy is investigated using in situ high-energy electron diffraction, high-resolution x-ray diffraction, atomic-force microscopy, and scanning electron microscopy. Growth temperature and phosphorus flux were varied. The 1.0-μm AlGaP films were grow on a GaP buffer layer and capped with GaP. The investigation indicates that a growth temperature of 490 °C and a cracked PH3 flux of 2.7 sccm resulted in the best AlGaP quality, while maintaining very good GaP quality.
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Authors
S. Dadgostar, E.H. Hussein, J. Schmidtbauer, T. Boeck, F. Hatami, W.T. Masselink,