Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
8149723 | Journal of Crystal Growth | 2015 | 9 Pages |
Abstract
The surface morphology, microstructural, and optical properties of indium gallium nitride (InGaN) films grown by plasma-assisted molecular beam epitaxy under low growth temperatures and slightly nitrogen-rich growth conditions are studied. The single-phase InGaN films exhibit improved defect density, an absence of stacking faults, efficient In incorporation, enhanced optical properties, but a grain-like morphology. With increasing In content, we observe an increase in the degree of relaxation and a complete misfit strain relaxation through the formation of a uniform array of misfit dislocations at the InGaN/GaN interface for InGaN films with indium contents higher than 55-60%.
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Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
Chloe A.M. Fabien, Brendan P. Gunning, W. Alan Doolittle, Alec M. Fischer, Yong O. Wei, Hongen Xie, Fernando A. Ponce,