Article ID Journal Published Year Pages File Type
8149884 Journal of Crystal Growth 2015 4 Pages PDF
Abstract
The incorporation of Bi in GaSb1−xBix alloys grown by molecular beam epitaxy is investigated as a function of Bi flux at fixed growth temperature (275 °C) and growth rate (1μmh−1). The Bi content is found to vary proportionally with Bi flux with Bi contents, as measured by Rutherford backscattering, in the range 0
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Related Topics
Physical Sciences and Engineering Physics and Astronomy Condensed Matter Physics
Preview
Bi flux-dependent MBE growth of GaSbBi alloys
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