| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 8149917 | Journal of Crystal Growth | 2015 | 8 Pages |
Abstract
In this paper, we report the non-equilibrium growth of various Mn-doped Ge dilute magnetic semiconductor nanostructures using molecular-beam epitaxy, including quantum dots, nanodisks and nanowires. Their detailed structural and magnetic properties are characterized. By comparing the results with those in MnxGe1âx thin films, it is affirmed that the use of nanostructures helps eliminate crystalline defects and meanwhile enhance the carrier-mediate ferromagnetism from substantial quantum confinements. Our systematic studies provide a promising platform to build nonvolatile spinFET and other novel spintronic devices based upon dilute magnetic semiconductor nanostructures.
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
Tianxiao Nie, Jianshi Tang, Kang L. Wang,