| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 8149919 | Journal of Crystal Growth | 2015 | 4 Pages |
Abstract
GaSb/GaAs quantum dots (QDs) and quantum rings (QRs) are investigated. By using periodical growth interrupts, precise coverage control can be achieved for GaSb QD growth by using a single Ga source. With direct As irradiation to the substrate surface during the post soaking time, the soaking time can be effectively reduced while full ring morphologies and room-temperature QR luminescence can still be obtained by using this method.
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
Hsuan-An Chen, Tung-Chuan Shih, Shiang-Feng Tang, Ping-Kuo Weng, Yau-Tang Gau, Shih-Yen Lin,