| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 8149951 | Journal of Crystal Growth | 2015 | 4 Pages |
Abstract
InAs quantum dots (QDs) were introduced as efficient nonlinear materials into a GaAs/AlAs coupled multilayer cavity, which was recently demonstrated as a novel THz emission device based on difference-frequency generation (DFG) of the two cavity modes. The couple multilayer cavity containing QDs was grown by molecular beam epitaxy and the THz-DFG was measured using femtosecond laser pulses.
Keywords
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
Masanori Ogarane, Sho Katoh, Yoshinori Nakagawa, Ken Morita, Takahiro Kitada, Toshiro Isu,