The formation of high number density InSb quantum dots, resulting from direct InSb/GaSb (001) heteroepitaxy

We report the direct deposition of indium antimonide, by molecular beam epitaxy (MBE) on gallium antimonide, resulting in the formation of quantum dots (QDs) with a maximum density of ~5.3×1010 cm−2. Using reflection high energy electron diffraction (RHEED) and atomic force microscopy (AFM) for the analysis of samples with InSb depositions of 1-6 ML equivalent thickness, we observe an apparent value for the critical thickness for InSb/GaSb (001) deposition of 2.3±0.3 ML, for the growth temperatures of 275 °C and 320 °C.