Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
8150054 | Journal of Crystal Growth | 2015 | 5 Pages |
Abstract
The molecular beam epitaxial growth and optimization of antimony-based interband cascade photodetectors, on both GaSb and GaAs substrates, are presented. Material characterization techniques, including X-ray diffraction, atomic force microscopy, and cross-sectional transmission electron microscopy, are used to evaluate the epitaxial material quality. This work has led to the demonstration of mid-infrared photodetectors operational up to a record-high 450Â K, and a dark current density as low as 1.10Ã10â7Â A/cm2 at 150Â K. The results also suggest that further improved material quality and device performance can be expected via optimization of growth parameters.
Keywords
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
Zhao-Bing Tian, Ted Schuler-Sandy, Sanjay Krishna, Dinghao Tang, David J. Smith,