Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
8150086 | Journal of Crystal Growth | 2015 | 6 Pages |
Abstract
We introduce a high pressure high temperature chamber for in situ synchrotron X-ray studies. The chamber design allows for in situ studies of thin film growth from solution at deeply buried interfaces in harsh environments. The temperature can be controlled between room temperature and 1073Â K while the pressure can be set as high as 50Â bar using a variety of gases including N2 and NH3. The formation of GaN on the surface of a Ga13Na7 melt at 1073Â K and 50Â bar of N2 is presented as a performance test.
Keywords
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
A.E.F. de Jong, V. Vonk, V. Honkimäki, B. Gorges, H. Vitoux, E. Vlieg,