High-purity InAs1-xSbx epilayer grown by a LPE technique

High-purity InAs1−xSbx films with x=0.06 were successfully grown on InAs (100) substrates by liquid phase epitaxy (LPE). Procedures were applied to purify InAs1-xSbx precursor material, which included prolonging baking time in hydrogen and adding rare-earth element gadolinium (Gd) to the growth melt. Electrical transport properties of InAs1-xSbx film were investigated by Hall measurements in the condition of the conductive InAs substrate being removed completely by chemical mechanical polishing (CMP) to eliminate its influence on the measurements. Hall measurement results show carrier concentration and mobility of our InAs1-xSbx samples are superior to the other reported values when a combinational purification procedure is applied.