Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
8150359 | Journal of Crystal Growth | 2015 | 6 Pages |
Abstract
In this work we report the first quasi-continuous in-situ photoluminescence study of growing InGaN LED structures inside an industrial-grade metal-organic vapor phase epitaxy (MOVPE) reactor at growth temperature. The photoluminescence spectra contain information about temperature, thickness and composition of the epitaxial layers. Furthermore, the in-situ spectra - even at an early stage of the growth of the active region - can be used to predict the photoluminescence emission wavelength of the structure at room temperature. In this study an accuracy of this predicted wavelength in the range of ± 1.3 nm (2Ï) is demonstrated. This technique thus appears suitable for closed-loop control of the emission wavelength of InGaN LEDs already during growth.
Keywords
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
C. Prall, C. Kaspari, F. Brunner, K. Haberland, M. Weyers, D. Rueter,