Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
8150482 | Journal of Crystal Growth | 2015 | 6 Pages |
Abstract
Cadmium telluride single crystals, doped by Bromine, were grown by Bridgman method and annealed under cadmium overpressure (PCd=102â105Â Pa) at 800-1100Â K. Their electrical properties at high- and low-temperature have been investigated. The influence of impurities on the crystal electrical properties has been analyzed by using the defective subsystem model, which includes the possibility of formation of point intrinsic (VCd2â, Cdi2+, VTe2+, Tei2â) and replacement defects (BrTe0, BrTe+), and also point defects complexes (BrTe+VCd2â), (2Br+Te VCdâ)0. It was established that the concentration dependence between free charge carriers and annealing process parameters (n(T), n(PCd)) are determined by two dominant defects âBrTe+ and (2Br+Te V2âCd)0. Their content varies with the annealing temperature and the vapor pressure of the component; the concentration of other defects is much smaller and almost does not influence the electron density.
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
I.V. Gorichok, P.M. Fochuk, Ye.V. Verzhak, T.O. Parashchuk, D.M. Freik, O.E. Panchuk, A.E. Bolotnikov, R.B. James,