Characterization of homoepitaxial β-Ga2O3 films prepared by metal-organic chemical vapor deposition

β-Ga2O3 films have been homoepitaxially deposited on β-Ga2O3 (1 0 0) substrates by metal organic chemical vapor deposition (MOCVD) method. The influences of different growth temperatures on the structure, Raman and optical properties of the homoepitaxial films have been studied. The structure of the obtained films is monoclinic β phase gallium oxide and the film deposited at 650 °C exhibits the best crystalline quality. The average transmittance of the samples in the visible and UV wavelength range is about 80%. The optical band gap of the films deposited at 600, 650 and 700 °C are about 4.72, 4.73 and 4.68 eV, respectively.