Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
8150732 | Journal of Crystal Growth | 2014 | 4 Pages |
Abstract
A novel apparatus has been employed to grow ammonothermal (0001) gallium nitride (GaN) with diameters up to 2Â in. The crystals have been characterized by x-ray diffraction rocking-curve (XRC) analysis, optical and scanning electron microscopy (SEM), cathodoluminescence (CL), and optical spectroscopy. High crystallinity GaN with FWHM values about 20-50Â arcsec and dislocation densities below 1Ã105Â cmâ2 have been obtained. High optical transmission was achieved with an optical absorption coefficient below 1Â cmâ1 at a wavelength of 450Â nm.
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Authors
Wenkan Jiang, Dirk Ehrentraut, Bradley C. Downey, Derrick S. Kamber, Rajeev T. Pakalapati, Hak Do Yoo, Mark P. D'Evelyn,