Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
8150769 | Journal of Crystal Growth | 2014 | 5 Pages |
Abstract
Currently there is high level of interest in developing of vertical device structures based on the group III nitrides. We have studied n- and p-doping of free-standing zinc-blende GaN grown by plasma-assisted molecular beam epitaxy (PA-MBE). Si was used as the n-dopant and Mg as the p-dopant for zinc-blende GaN. Controllable levels of doping with Si and Mg in free-standing zinc-blende GaN have been achieved by PA-MBE. The Si and Mg doping depth uniformity through the zinc-blende GaN layers have been confirmed by secondary ion mass spectrometry (SIMS). Controllable Si and Mg doping makes PA-MBE a promising method for the growth of conducting group III-nitrides bulk crystals.
Related Topics
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Authors
S.V. Novikov, R.E. L. Powell, C.R. Staddon, A.J. Kent, C.T. Foxon,