Article ID Journal Published Year Pages File Type
8150786 Journal of Crystal Growth 2014 28 Pages PDF
Abstract
In this work homoepitaxial HVPE-GaN growth on non-polar and semi-polar GaN seeds was described. Two crystallization processes, in the same experimental conditions but using different carrier gases: N2 and H2, were performed. An influence of growth directions and growth conditions on the growth rate and properties (morphology, structural quality and oxygen and silicon contaminations) of obtained crystals were investigated and discussed. It was shown that the growth rate strongly depends on the growth direction and the carrier gas. It was demonstrated that for the semi-polar [20-21] direction it was possible to obtain high quality and highly conductive (without intentional doping) gallium nitride layers.
Related Topics
Physical Sciences and Engineering Physics and Astronomy Condensed Matter Physics
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