Defect analysis in AlGaN layers on AlN templates obtained by epitaxial lateral overgrowth

The defect distribution in thick AlN layers obtained by epitaxial lateral overgrowth (ELO-AlN) has been analyzed as a function of the miscut direction of the patterned sapphire substrate. A 0.25° miscut toward the sapphire a-plane leads to formation of smooth ELO-AlN layers containing vertical coalescence grain boundaries and exhibiting an almost homogeneous threading dislocation (TD) distribution with a TD density ranging from 5×108 cm−2 to 8×108 cm−2. In contrast, a 0.25° miscut toward the sapphire m-plane results in formation of periodically arranged macrosteps on the surface of the coalesced ELO-AlN layers as well as formation of inclined coalescence grain boundaries leading to an inhomogeneous TD distribution. A subsequent AlxGa1−xN deposition onto ELO-AlN template with surface macrosteps leads to Ga enrichment on the step sidewalls and, for lower Al-contents (e.g. x=0.5), even to additional defect formation. For higher Al contents (e.g. x=0.8) no additional threading dislocations are formed in the AlGaN layers and the observed TD density corresponds to that of the ELO-AlN template: less than 108 cm−2 in the wing regions and from 6×108 cm−2 to 9×108 cm−2 above the ridges. Compressive strain during growth of Al0.8Ga0.2N on ELO-AlN tends to be compensated by threading dislocation inclination. However, due to the low TD densities the inclination angles are more than 3 times larger than those observed in Al0.8Ga0.2N layers on planar AlN/sapphire templates.