Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
8150894 | Journal of Crystal Growth | 2014 | 4 Pages |
Abstract
We performed ammonothermal synthesis of a self-nucleated GaN seed and grew crystalline GaN on the seed in the presence of an NH4F-based mineralizer. Our results suggest that spontaneously nucleated, high-quality GaN crystals can be obtained by recrystallization of polycrystalline hydride vapor phase epitaxy (HVPE) GaN under acidic ammonothermal conditions. We achieved average growth speeds of up to 410 and 465 μm/day on the c- and m-directions, respectively, after four consecutive crystal growths of GaN on a self-nucleated seed. GaN crystals grown on an HVPE seed and on a self-nucleated seed had comparable crystal quality, judged from room-temperature photoluminescence measurements.
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
Quanxi Bao, Makoto Saito, Kouji Hazu, Yuji Kagamitani, Kouhei Kurimoto, Daisuke Tomida, Kun Qiao, Tohru Ishiguro, Chiaki Yokoyama, Shigefusa F. Chichibu,