Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
8150951 | Journal of Crystal Growth | 2014 | 15 Pages |
Abstract
The temperature field in the metalorganic vapor phase epitaxy (MOVPE) reactor heated by induction is investigated, by using the numerical simulation. A novel susceptor composed of two materials is proposed. Compared to the conventional susceptor, the new susceptor can change the rates of the heat transfer, and improve the uniformity of the temperature distribution in the wafer. This susceptor for heating the wafer of eight inches in diameter is optimized by using the finite element method (FEM). It is found that the optimized susceptor makes the uniformity of the temperature distribution in the wafer improve more than 84.7%, which may be of great benefit to the film growth.
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
Zhiming Li, Jincheng Zhang, Jinping Li, Haiying Jiang, Xiaoqian Fu, Yanbin Han, Yingjie Xia, Yimei Huang, Jianqin Yin, Lejuan Zhang, Yue Hao,