Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
8150952 | Journal of Crystal Growth | 2014 | 10 Pages |
Abstract
Floating graphite and fused silica dies were used to grow both undoped and Na doped CsI crystals by the edge-defined film-fed growth (EFG) method. Both die materials yielded high quality CsI crystals at high growth rates. Under the conditions employed in these growth experiments, a pull rate of up to 45Â mm/h was possible using a 15Â mm diameter graphite die. Growth procedures were developed to enhance crystal quality through iterative die design in combination with numerical modeling. The formation of cylindrical voids (bubble tracks) was investigated and methods were developed for their suppression.
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
Christo Guguschev, George Calvert, Stephen Podowitz, Arturas Vailionis, Andrew Yeckel, Robert S. Feigelson,