Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
8150972 | Journal of Crystal Growth | 2014 | 34 Pages |
Abstract
Based on the growth of 3-inch diameter c-axis sapphire using the vertical Bridgman (VB) technique, numerical simulations were made and used to guide the growth of a 6-inch diameter sapphire. A 2D model of the VB hot-zone was constructed, the seeding interface shape of the 3-inch diameter sapphire as revealed by green laser scattering was estimated numerically, and the temperature distributions of two VB hot-zone models designed for 6-inch diameter sapphire growth were numerically simulated to achieve the optimal growth of large crystals. The hot-zone model with one heater was selected and prepared, and 6-inch diameter c-axis sapphire boules were actually grown, as predicted by the numerical results.
Keywords
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
Chihiro Miyagawa, Takumi Kobayashi, Toshinori Taishi, Keigo Hoshikawa,