Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
8150996 | Journal of Crystal Growth | 2014 | 5 Pages |
Abstract
LiGaO2 single crystal, a promising substrate for GaN and ZnO epitaxial growth, has been grown by the Czochralski method. X-ray diffraction, atomic force microscopy, micro-Raman, DUV-visible-NIR, photoluminescence and cathodoluminescence were used to characterize as-grown LiGaO2 single crystals. The polished LiGaO2 substrates displayed improved surface morphology with inconspicuous surface scratches. The optical band gap energy of the LiGaO2 single crystal was found to be 5.26Â eV. The cathodoluminescence spectrum of the LiGaO2 single crystal exhibited strong UV emission, accompanied by weak, green-yellow emission.
Keywords
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
Chenlong Chen, Chu-An Li, Shih-Hsun Yu, Mitch M.C. Chou,