| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 8151203 | Journal of Crystal Growth | 2014 | 16 Pages |
Abstract
We developed high-temperature autoclaves which are capable of growing GaN crystals at temperature <850 °C and pressure <150 MPa. A high-temperature acidic ammonothermal method with acidic mineralizer revealed retrograde solubility of GaN, and yielded GaN crystals with XRC-FWHM values of around 30â³.
Keywords
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
Kazuo Yoshida, Kensuke Aoki, Tsuguo Fukuda,