Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
8151540 | Journal of Crystal Growth | 2014 | 5 Pages |
Abstract
We report on the synthesis of non-tapered wurtzite (WZ) GaP nanowires by use of in-situ etching and the structural and optical characterization thereof. HCl was evaluated as an in-situ etchant in order to impede the onset of radial growth since the WZ crystal phase in GaP nanowires preferentially grows at relatively high growth temperatures around 600 °C, at which strong radial growth typically occurs. Transmission electron microscopy measurements confirmed non-tapered WZ GaP nanowires after growth. Photoluminescence characterization revealed defect related red emission, possibly related to transitions within the bandgap. Raman measurements show that the phonon energies in WZ GaP are very close in energy to the phonon energies in zinc blende GaP.
Keywords
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
Alexander Berg, Sebastian Lehmann, Neimantas Vainorius, Anders Gustafsson, Mats-Erik Pistol, L. Reine Wallenberg, Lars Samuelson, Magnus T. Borgström,