Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
8151635 | Journal of Crystal Growth | 2014 | 7 Pages |
Abstract
Structural investigation of the seeding process for the physical vapor transport (PVT) growth of 4H-SiC single crystals was conducted by high-resolution x-ray diffraction (HRXRD) and synchrotron x-ray topography. Characteristic lattice plane bending behavior was observed in the near-seed regions of the grown crystals. The bending of the (112Ì0) lattice plane was localized near the seed/grown crystal interface, and the (0001) basal plane bent convexly in the growth direction near the interface, indicative of the insertion of extra-half planes pointing toward the growth direction during the seeding process for PVT growth. This study discusses a possible mechanism for the observed lattice plane bending and sheds light on defect formation processes during the PVT growth of 4H-SiC single crystals.
Keywords
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
Noboru Ohtani, Chikashi Ohshige, Masakazu Katsuno, Tatsuo Fujimoto, Shinya Sato, Hiroshi Tsuge, Wataru Ohashi, Takayuki Yano, Hirofumi Matsuhata, Makoto Kitabatake,