Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
8151997 | Journal of Crystal Growth | 2013 | 7 Pages |
Abstract
Aluminium nitride was grown on c-plane sapphire by metal organic vapor phase epitaxy (MOVPE) at temperatures of 1070 °C by a pulsed growth method and in continuous growth mode at temperatures up to 1270 °C. For both methods the V/III ratio was varied and different approaches for the growth start were investigated. The crystal quality was mainly characterized by scanning electron microscopy and high resolution X-ray diffraction which showed unusual line shape for certain samples. Both growth methods enabled the growth of more than 1μm thick, atomically flat, Al-polar layers with edge type dislocation densities in the order of 3Ã1010cmâ2 for pulsed samples and 5Ã109cmâ2 for conventionally grown samples.
Keywords
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
Hanno Kröncke, Stephan Figge, Timo Aschenbrenner, Detlef Hommel,