Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
8152053 | Journal of Crystal Growth | 2013 | 5 Pages |
Abstract
The N incorporation is studied in AlGaNAs with low Al content grown by chemical beam epitaxy at low temperature using dimethylhydrazine as the N precursor. The incorporation efficiency is significantly enhanced by introducing a relatively low Al concentration. The relation between the N incorporation and N/(N+As) flow ratio for Al concentrations of 0-15% is presented. The highest N incorporation and the best AlGaNAs crystal quality are obtained between 400 °C and 440 °C, where the growth mode starts to change from 2D to 3D. The activation energies for N incorporation in both the 2D and 3D growth mode regions are extracted.
Related Topics
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Authors
Gitanjali Kolhatkar, Abderraouf Boucherif, Christopher E. Valdivia, Steven G. Wallace, Simon Fafard, Vincent Aimez, Richard Arès,