Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
8152068 | Journal of Crystal Growth | 2013 | 10 Pages |
Abstract
The role of various growth and process conditions (Lorentz force, temperature gradients in the melt and the crystal, steady-state crystallization velocity) in directional solidification of multicrystalline silicon in a traveling magnetic field is analyzed for a research-scale furnace (melt size of 22Ã22Ã11Â cm3). The influence on the melt flow pattern, the typical melt flow velocity, the oscillation amplitude of the velocity and the temperature, the shape of the crystallization interface is determined using three-dimensional (3D) numerical calculations with the STHAMAS3D software and a local quasi steady-state model. It was found that both the interface shape and the melt flow are sensitive to the variation of the considered growth and process parameters.
Keywords
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
D. Vizman, K. Dadzis, J. Friedrich,