Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
8152128 | Journal of Crystal Growth | 2013 | 4 Pages |
Abstract
A single-phase wurtzite MgZnO film with an optical band gap of 294.5Â nm was synthesized on ZnO substrate by molecular beam epitaxy, and a photodetector was fabricated working in the ultraviolet-B spectrum region. Wurtzite BeO was adopted to restrain the substrate response as an insulating layer and provide an excellent epitaxial template for high-Mg-content MgZnO growth. In situ reflection high-energy electron diffraction observations, ex situ X-ray diffraction and reflectance spectrum indicate the achievement of high-quality single-phase wurtzite MgZnO with smooth surface and deep ultraviolet band gap. The BeO layer efficiently suppresses the photoresponse from the substrate, as the photodetector demonstrates a sharp cutoff at 290Â nm, consistent with the optical band gap.
Related Topics
Physical Sciences and Engineering
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Condensed Matter Physics
Authors
H.L. Liang, Z.X. Mei, Y.N. Hou, S. Liang, Z.L. Liu, Y.P. Liu, J.Q. Li, X.L. Du,