Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
8152130 | Journal of Crystal Growth | 2013 | 16 Pages |
Abstract
A study of the effect of isoelectronic surfactants (In and P) on the photoluminescence and photovoltaic characteristics of GaAs-Ge heterostructures is presented. The surfactants were introduced into the structure by simultaneous post-growth diffusion. A GaAs photoluminescence spectra analysis was performed via a layer-by-layer etching procedure. It is shown that the effect of the surfactants is observed over a wide concentration range from 3Ã1017 to 1Ã1020Â cmâ3. The effects of the In and P passivation of nonradiative recombination centers are observed. A p-n junction was formed via phosphorus diffusion. PV conversion efficiency of 3.2% for the 900-1840Â nm wavelength region has been registered under 40-400x concentrated sunlight (AM1.5D low-AOD).
Related Topics
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Condensed Matter Physics
Authors
L.B. Karlina, A.S. Vlasov, B.Y. Ber, D.Yu. Kazanthev, E.P. Marukhina,