Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
8152195 | Journal of Crystal Growth | 2013 | 21 Pages |
Abstract
GaGeTe single crystals were grown using a modified Bridgman method. The prepared samples were characterized by X-ray diffraction and investigated using measurements of the reflectance in the plasma-resonance-frequency region and measurements of the transmittance spectra in the MIR, NIR and VIS regions. An analysis of the plasma resonance indicates a near-degenerate state in the GaGeTe single crystal. The variation of the square of the absorption coefficient, α2, as a function of incident radiation energy showed two distinct minima of α located at â0.5 and â1.0 eV. The free carrier scattering mechanism was estimated from the slope of the long-wavelength edge. The transport measurement evidence of single-crystalline GaGeTe is a degenerate p-type semiconductor with a concentration of holes of pâ
5.1019Â cmâ3. The mobility of the holes is rather low.
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
Vladimir Kucek, Cestmir Drasar, Jiri Navratil, Ludvik Benes, Petr Lostak,