Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
8152226 | Journal of Crystal Growth | 2013 | 7 Pages |
Abstract
An influence of a nitridation process on a self lift-off phenomenon during the HVPE crystallization of GaN on a MOCVD-GaN/sapphire template with photolitographically patterned Ti mask was investigated. Duration of the nitridation process and flows of reagents in this process were modified. A correlation between degradation degree of a GaN template surface and the conditions of the nitridation process was observed. It was also observed that the degree of degradation had a direct influence on a moment of the self lift-off phenomenon (separation of a HVPE-GaN crystal from the template). It was shown that the best free-standing HVPE-GaN crystals, in sense of their structural quality, were obtained when the separation process occurred during cooling down step.
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
M. Amilusik, T. Sochacki, B. Åucznik, M. BoÄkowski, B. Sadovyi, A. Presz, I. DziÄcielewski, I. Grzegory,