Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
8152368 | Journal of Crystal Growth | 2012 | 5 Pages |
Abstract
The morphology, structural and optical properties of void-assisted freestanding HVPE-AlN films were investigated by a combination of non-destructive microscopic and spectroscopic techniques. The freestanding approximately 80 μm thick clear film has a wurtzite crystalline structure with remarkable properties around the central film region. The E2(high)-phonon frequency coincides with reported stress-free film phonon frequency. The low temperature luminescence study of the growth and interface sides of the film is consistent with the incorporation of a high concentration of oxygen impurities. These results are promising as the growth method amenable to the production of freestanding stress-free large area substrates for epitaxial growth.
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
J.A. Jr., J.C. Culbertson, M.A. Mastro, Y. Kumagai, A. Koukitu,