| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 8152412 | Journal of Crystal Growth | 2012 | 6 Pages |
Abstract
⺠Heat treatment of sapphire substrates in the range 980-1480 °C was investigated. ⺠AlN whiskers formed on sapphire by heat treatment in mixed flows of H2 and N2. ⺠Thermodynamic analysis of high-temperature heat treatment of sapphire was performed.
Keywords
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
Yoshinao Kumagai, Takahiro Igi, Masanari Ishizuki, Rie Togashi, Hisashi Murakami, Kazuya Takada, Akinori Koukitu,