Resistive switching and ferromagnetism modulation in copper oxide film on Nb:SrTiO3 substrate

The Ag/copper oxide film/Nb:SrTiO3/Ag device exhibits the resistive switching accompanied with the electric field control of ferromagnetism. The ferromagnetism could also be modulated by ultraviolet and violet light with certain frequency at room temperature. The bipolar resistive switching in Ag/copper oxide film/Nb:SrTiO3/Ag device may depend on the change in a Schottky-like barrier height. In the same saturation current, we can change the sweeping voltage to get a different resistance change ratio. The changes of sweeping voltage will affect the Schottky-like barrier height, resulting in the resistance switching. The accompanying electric field control of ferromagnetism is mainly from the changes in the amount of oxygen vacancies in copper oxide film when the resistance state changes. The light-modulated ferromagnetism may be due to the enhancement of indirect double exchange. The capture of photo-generated holes by Cu+ may lead to changes in valence of some Cu ions, affecting the indirect double exchange. Through the resistive switching and ferromagnetism modulation in this report, it is possible to achieve the multi-state memory in future work.