Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
8153100 | Journal of Magnetism and Magnetic Materials | 2018 | 6 Pages |
Abstract
Ga1âxMnxAs layers prepared by ion implantation and subsequent pulsed laser annealing with the planned Mn concentrations of xâ¯=â¯0.01-0.08 have been studied using the magneto-optical transversal Kerr effect (TKE) and spectral ellipsometry. The spectral dependences of the diagonal and nondiagonal components of the permittivity tensor (PT), as well as the spectrum of magnetic circular dichroism (MCD) have been calculated for the layers. The obtained spectra of the diagonal PT components show that the layers under study maintain the zinc-blende crystal structure of the parent GaAs semiconductor. All studied samples reveal a strong TKE response at low temperatures with a dependence of an effective Curie temperature (at which TKE appears) on the Mn concentration. A number of extrema in the low-temperature TKE and MCD spectra are close to the energies of transitions in the Î and L critical points of the parent semiconductor band structure that confirms the intrinsic ferromagnetism of the Ga1âxMnxAs layers. The MCD spectra shape and its change with Mn concentration increasing are discussed on a base of the valence-band model of ferromagnetism in DMS.
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
E.A. Gan'shina, L.L. Golik, Z.E. Kun'kova, G.S. Zykov, I.V. Bykov, A.I. Rukovishnikov, Ye Yuan, R. Böttger, S. Zhou,