| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 8153794 | Journal of Magnetism and Magnetic Materials | 2018 | 4 Pages |
Abstract
Multilevel resistance switching (RS) effect has attracted more and more attention due to its promising potential for the increase of storage density in memory devices. In this work, the transport properties are investigated in an Au/La2/3Ba1/3MnO3 (LBMO)/Pt heterostructure. Taking advantage of the strong interplay among the spin, charge, orbital and lattice of LBMO, the Au/LBMO/Pt device can exhibit bipolar RS effect and magnetoresistance effect simultaneously. Under the coaction of electric field and magnetic field, four different resistance states are achieved in this device. These resistance states show excellent repeatability and retentivity and can be switched between any two states, which suggest the potential applications in the multilevel RS memory devices with enhanced storage density.
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
Jiahong Wen, Xiaoyu Zhao, Qian Li, Sheng Zhang, Dunhui Wang, Youwei Du,