Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
8155374 | Journal of Magnetism and Magnetic Materials | 2016 | 6 Pages |
Abstract
The effects of hydrogen-annealing at different temperatures (300, 400, 500 and 600 °C) on physical properties of In2âxFexO3 (x=0.025) thin film were investigated. The structural measurement using XRD shows that the film has a single In2O3 phase structure when annealed in hydrogen at 300-500 °C, however when annealed in hydrogen at 600 °C the film has a mixed phase structure of In2O3 and In phases. The electrical measurements show that the carrier concentrations of the films decrease with the increase of hydrogen-annealing temperature in the range 300-500 °C. The optical band gap of the films decreases with increasing hydrogen-annealing temperatures. The saturation magnetisation, Ms, and coercivity of films increase with the increment of hydrogen annealing temperature. The film annealed at 300 °C has the lowest resistivity, Ï=0.03 Ω cm, and the highest carrier concentrations, n=6.8Ã1019 cmâ3, while film annealed at 500 °C has both good electrical (Ï=0.05 Ω.cm and n=2.2Ã1019 cmâ3) and magnetic properties, Ms=21 emu/cm-3.
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
H. Baqiah, N.B. Ibrahim, S.A. Halim, S.K. Chen, K.P. Lim, M.M. Awang Kechik,