A device model framework for magnetoresistive sensors based on the Stoner-Wohlfarth model

The Stoner-Wohlfarth (SW) model provides an efficient analytical model to describe the behavior of magnetic layers within magnetoresistive sensors. Combined with a proper description of magneto-resistivity an efficient device model can be derived, which is necessary for an optimal electric circuit design. Parameters of the model are determined by global optimization of an application specific cost function which contains measured resistances for different applied fields. Several application cases are examined and used for validation of the device model.