Dependence of magnetic properties on the growth temperature of Mn0.04Ge0.96 grown on Si (001)

The structural and magnetic properties of Mn0.04Ge0.96 thin films grown on Si (001) substrates at different growth temperatures were investigated. The films were grown by sequential deposition of MnGe and Ge multilayers using molecular beam epitaxy. It was found that the magnetic ordering and Curie temperature could be controlled by adjusting the distance between the Mn ions in the Ge spacer layer depending on growth temperature. We found that the samples grown below 130 °C contained highly disordered ferromagnetic Mn rich domains. Both structural and magnetic characterizations revealed that Mn5Ge3 precipitates were formed in Mn clusters free Ge matrix when the samples were grown at 150 °C. Both the Mn rich domains and Mn5Ge3 precipitates showed out of the plane magnetic anisotropy and similar ESR line shapes.