Magnetic semiconductor and metal-semiconductor junction by Fen nanoparticles encapsulated in beryllium oxygen nanotube

By using first-principles calculations within the density function theory, the structural, electronic and magnetic properties of BeO nanotube filled with Fen nanoparticles are investigated. We found that all these Fen nanoparticle@BeONTs systems are ferromagnetic (FM) and a spin splitting between spin up and down electrons is observed. In terms of nanoparticle diameter, the Fen nanoparticle@BeONT system could be a semiconductor, half-metal or metal. Also the BeONT locally become non-magnetic semiconductor/magnetic semiconductor junctions or non-magnetic semiconductor/magnetic metal junctions in terms of nanoparticle diameter. The high magnetic moment and spin polarization of the Fen@BeONTs systems imply that it can be used as heterojunctions in electronic devices, magnetic recording, spintronics and are vital for the fabrication of robust nanotube-metal composite materials.