Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
8160158 | Physica B: Condensed Matter | 2018 | 12 Pages |
Abstract
A solar light optoelectronic device was fabricated using KBiCu2S3 and p-type silicon semiconductor. Electrical behavior of the optoelectronic device was characterized under solar light using current-electric field and phototransient current and capacitance-time measurements. Under solar light, the current at reverse bias region varies while the forward current did not change. The photoresponse ratio of photocurrent to dark current under 1000â¯W/m2 was determined to be 79. This ratio suggests that the KBiCu2S3/p-type silicon device is a photodevice with its photovoltaic behavior. The junction interface behavior of the device was analyzed by capacitance-electric field (CV) characteristics. The CV behavior of the device was corrected by the series resistance. KBiCu2S3/p-type silicon optoelectronic device. The device is called as FYTRONIX optoelectronic device as it works both photodevice and photocapacitor modes. The FYTRONIX optoelectronic device can be used as a optoelectronic device in optic communication system applications.
Keywords
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
A. Dere,