Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
8160174 | Physica B: Condensed Matter | 2018 | 29 Pages |
Abstract
We study the impact of non-square potential well structure on the electron mobility μ of double quantum well (DQW) based field effect transistors carved out of the AlxGa1-xAs alloy. The barriers lying towards the substrate and surface sides of the DQW are delta doped with Si. We consider DQWs having V-shaped (VDQW), parabolic (PDQW), cubic (CDQW) and square (SDQW) potential wells to obtain the low temperature double subband electron mobility μ. We consider ionized impurity (Imp-) and alloy disorder (Al-) scatterings to calculate μ as a function of well width w and surface electron density NS. We show that the changes in the structure potentials influence the interplay of intersubband effects on the scattering mechanisms differently causing μ(VDQW)â¯<â¯Î¼(PDQW) â
μ(CDQW) as a function of w whereas μ(VDQW)â¯<â¯Î¼(PDQW)â¯<â¯Î¼(CDQW) as a function of Ns. We show that μ increases not only with increase in the width of the central barrier b but also decrease with the height of the non-square potentials. Our results can be utilized to analyze the effect of non-square quantum well potentials on the channel conductivity of the quantum well modulation doped field effect transistors.
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
Sangeeta K. Palo, Trinath Sahu, A.K. Panda,