Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
8160287 | Physica B: Condensed Matter | 2018 | 5 Pages |
Abstract
At the present work, nanocrystalline silicon carbide (3CSiC) irradiated by neutrons (2â¯Ãâ¯1013 n/cm2s) up to 20â¯h. The current-voltage (IV) characteristics of the nanocrystalline 3CSiC particles have been investigated in the voltage range of â100 V to + 100 V with a 5 V step. The slope of the line changed at the IV characteristic of the nanomaterial after neutron irradiation. Simultaneously, the resistance of nanocrystalline 3CSiC decreased approximately from 4â¯MΩ to 1â¯MΩ after neutron irradiation. Moreover, the Fowler-Nordheim plots showed that the processes occurred in the nanomaterial were directly based on a tunnel effect and no field emission was observed. It is clear from Fowler-Nordheim plots that, thermal activity is dominated at the all experimental intervals.
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
Elchin M. Huseynov,