Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
8160603 | Physica B: Condensed Matter | 2018 | 25 Pages |
Abstract
polycrystalline GaFeO3 and Ga0.98Zn0.02Fe0.98Ti0.02O3 were prepared by solid state reaction. They showed an orthorhombic crystal structure with Pc21n space group. The magnetic transition temperature decrease due to the dilution of the magnetic interaction. A noteworthy effect of substitution of multiple elements at the Ga and Fe-sites on dielectric constant and tangent loss of GaFeO3 has been observed. Complete studies of temperature (180-400â¯K) and frequency (10-107â¯Hz) dependence of dielectric constant and impedance have provided the effect of grains and grain boundaries on the conduction mechanism and dielectric relaxation of the material. Impedance spectroscopy results in the temperature range 160-400â¯K have revealed a distinct conduction process at grain and grain boundaries.
Related Topics
Physical Sciences and Engineering
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Condensed Matter Physics
Authors
Imen Raies, Shara A. Dulmani, Mongi Amami,