Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
8160892 | Physica B: Condensed Matter | 2018 | 32 Pages |
Abstract
Studying the performance limiting parameters of the Schottky device is an urgent issue, which are addressed herein by thermally stable silver nanowire (AgNW) embedded metal oxide/p-Si Schottky device. Temperature and bias dependent junction interfacial properties of AgNW-ITO/Si Schottky photoelectric device are reported. The currentâvoltageâtemperature (IâVâT), capacitance-voltage-temperature (CâVâT) and impedance analysis have been carried out in the high-temperature region. The ideality factor and barrier height of Schottky junction are assessed using IâVâT characteristics and thermionic emission, to reveal the decrease of ideality factor and increase of barrier height by the increasing of temperature. The extracted values of laterally homogeneous Schottky (Ïb) and ideality factor (n) are approximately 0.73â¯eV and 1.58, respectively. Series resistance (Rs) assessed using Cheung's method and found that it decreases with the increase of temperature. A linear response of Rs of AgNW-ITO/Si Schottky junction is observed with respect to change in forward bias, i.e. dRS/dV from 0 to 0.7â¯V is in the range of 36.12-36.43â¯Î© with a rate of 1.44â¯Î©/V. Impedance spectroscopy is used to study the effect of bias voltage and temperature on intrinsic Schottky properties which are responsible for photoconversion efficiency. These systematic analyses are useful for the AgNWs-embedding Si solar cells or photoelectrochemical cells.
Keywords
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
Pramila Mahala, Malkeshkumar Patel, Navneet Gupta, Joondong Kim, Byung Ha Lee,