Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
8161057 | Physica B: Condensed Matter | 2018 | 29 Pages |
Abstract
A pressure-induced valence transition has attracted much attention in Eu-compounds. Among them, EuRh2Si2, EuNi2Ge2, and EuCo2Ge2 reveal the valence transition around 1, 2, and 3Â GPa, respectively. We have succeeded in growing single crystals of EuT2X2 (T: transition metal, X: Si, Ge) and studied electronic properties under pressure. EuRh2Si2 indicates a first-order valence transition between 1 and 2Â GPa, with a large and prominent hysteresis in the electrical resistivity. At higher pressures, the first-order valence transition changes to a cross-over regime with an intermediate valence state. Tuning of the valence state with pressure is reflected in a drastic change of the temperature dependence of the electrical resistivity in EuRh2Si2 single crystals. Effect of pressure on the valence states on EuRh2Si2, EuIr2Si2, EuNi2Ge2, and EuCo2Ge2, as well as an isostructural related compound EuGa4, are reviewed.
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
Fuminori Honda, Keigo Okauchi, Yoshiki Sato, Ai Nakamura, Hiromu Akamine, Yosuke Ashitomi, Masato Hedo, Takao Nakama, Tetsuya Takeuchi, Jaroslav Valenta, Jiri Prchal, Vladimir Sechovský, Dai Aoki, Yoshichika Ånuki,