Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
8161072 | Physica B: Condensed Matter | 2018 | 13 Pages |
Abstract
Deep level transient spectroscopy (DLTS) was used to characterise Cs implanted GaN grown by hydride vapour phase epitaxy (HVPE). This implantation was done at room temperature using energy of 360Â keV to a fluence of 10-11Â cmâ2. A defect with activation energy of 0.19Â eV below the conduction band and an apparent capture cross section of 1.1 Ã 10-15Â cm2 was induced. This defect has previously been observed after rare earth element (Eu, Er and Pr) implantation. It has also been reported after electron, proton and He ion implantation.
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
P.N.M. Ngoepe, W.E. Meyer, F.D. Auret, E. Omotoso, T.T. Hlatshwayo, M. Diale,